US 12,451,880 B2
On-state voltage measurement circuit
Ryosuke Maeda, Osaka (JP); Yusuke Kinoshita, Kyoto (JP); and Satoshi Nakazawa, Osaka (JP)
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka (JP)
Appl. No. 18/546,741
Filed by Panasonic Intellectual Property Management Co., Ltd., Osaka (JP)
PCT Filed Feb. 22, 2022, PCT No. PCT/JP2022/007123
§ 371(c)(1), (2) Date Aug. 16, 2023,
PCT Pub. No. WO2022/181581, PCT Pub. Date Sep. 1, 2022.
Claims priority of application No. 2021-029259 (JP), filed on Feb. 25, 2021.
Prior Publication US 2024/0313759 A1, Sep. 19, 2024
Int. Cl. H03K 17/082 (2006.01)
CPC H03K 17/0822 (2013.01) 6 Claims
OG exemplary drawing
 
1. An on-state voltage measurement circuit configured to measure an on-state voltage of a semiconductor switch element, the semiconductor switch element including a first control terminal, a first main terminal corresponding to the first control terminal, a second control terminal, and a second main terminal corresponding to the second control terminal, the on-state voltage being a voltage between the first main terminal and the second main terminal of the semiconductor switch element in an on state, the on-state voltage measurement circuit comprising:
a first detecting switch element including a first drain terminal, a first source terminal, and a first gate terminal;
a first control unit including a first signal output terminal and a first reference potential terminal and configured to control the first detecting switch element;
a first resistive element connected between the first source terminal and the first reference potential terminal;
a first voltage detection unit;
a second detecting switch element including a second drain terminal, a second source terminal, and a second gate terminal;
a second control unit including a second signal output terminal and a second reference potential terminal and configured to control the second detecting switch element;
a second resistive element connected between the second source terminal and the second reference potential terminal; and
a second voltage detection unit,
the first drain terminal of the first detecting switch element and the second drain terminal of the second detecting switch element being connected to each other,
a resistance value of the first resistive element being greater than an on-state resistance of the first detecting switch element,
a resistance value of the second resistive element being greater than an on-state resistance of the second detecting switch element,
the first voltage detection unit being configured to detect, based on a voltage across the first resistive element when the semiconductor switch element and the first detecting switch element are both on, the on-state voltage of the semiconductor switch element connected between the first reference potential terminal and the second reference potential terminal, and
the second voltage detection unit being configured to detect, based on a voltage across the second resistive element when the semiconductor switch element and the second detecting switch element are both on, the on-state voltage of the semiconductor switch element connected between the first reference potential terminal and the second reference potential terminal.