US 12,451,878 B2
High-voltage bidirectional field effect transistor
Chirag Gupta, Madison, WI (US); and Shubhra S. Pasayat, Middleton, WI (US)
Assigned to Wisconsin Alumni Research Foundation, Madison, WI (US)
Filed by Wisconsin Alumni Research Foundation, Madison, WI (US)
Filed on Nov. 23, 2022, as Appl. No. 18/058,453.
Prior Publication US 2024/0171169 A1, May 23, 2024
Int. Cl. H03K 17/0412 (2006.01); H03K 17/687 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/83 (2025.01); H03K 17/689 (2006.01); H03K 17/693 (2006.01)
CPC H03K 17/04123 (2013.01) [H03K 17/6874 (2013.01); H10D 30/01 (2025.01); H10D 30/6733 (2025.01); H10D 62/115 (2025.01); H10D 62/8303 (2025.01); H03K 2017/6878 (2013.01); H03K 17/689 (2013.01); H03K 17/693 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A bidirectional field-effect transistor comprising:
a semiconductor channel positioned between device terminals providing current flow laterally through the channel;
at least one field-effect gate having a gate conductor positioned along the semiconductor channel between the device terminals to control current between the device terminals through the channel by a field effect;
a dielectric oxide having a dielectric constant of greater than 50 positioned along and adjacent to the channel and laterally beyond edges of the gate conductor of the at least one field-effect gate and operative to moderate field gradients;
wherein each the at least one field-effect gate is positioned to so that all gates of the bidirectional field-effect transistor are mirror symmetric between the device terminals.