US 12,451,851 B2
Parametric amplifier and uses thereof
Gijsbertus De Lange, Schiphol (NL); and Wolfgang Pfaff, Delft (NL)
Assigned to Microsoft Technology Licensing, LLC, Redmond, WA (US)
Appl. No. 17/756,036
Filed by Microsoft Technology Licensing, LLC, Redmond, WA (US)
PCT Filed Nov. 15, 2019, PCT No. PCT/EP2019/081549
§ 371(c)(1), (2) Date May 13, 2022,
PCT Pub. No. WO2021/093977, PCT Pub. Date May 20, 2021.
Prior Publication US 2022/0407482 A1, Dec. 22, 2022
Int. Cl. H03F 3/195 (2006.01); G06N 10/00 (2022.01); H03F 19/00 (2006.01); H10N 60/12 (2023.01); H10N 60/80 (2023.01); H10N 69/00 (2023.01)
CPC H03F 19/00 (2013.01) [G06N 10/00 (2019.01); H10N 60/12 (2023.02); H10N 60/805 (2023.02); H10N 69/00 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A parametric amplifier for amplifying an input signal, including:
a resonator comprising a Josephson junction;
wherein the Josephson junction comprises a first superconductor component, a second superconductor component and a semiconductor component, the semiconductor component being configured to enable coupling of the first and second superconductor components;
wherein the parametric amplifier further comprises a gate electrode configured to apply an electrostatic field to the semiconductor component for tuning the parametric amplifier; and
wherein the gate electrode is in communication with a gate voltage source and a pumping signal source via a bias-Tee.