US 12,451,848 B2
Amplifier with low-gain architecture for mmWave radio frequency (RF) signals
Alaaeldien Mohamed Abdelrazek Medra, San Diego, CA (US); Xinmin Yu, San Diego, CA (US); and Yunfei Feng, San Diego, CA (US)
Assigned to QUALCOMM Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Apr. 21, 2022, as Appl. No. 17/660,172.
Prior Publication US 2023/0344390 A1, Oct. 26, 2023
Int. Cl. H03F 3/19 (2006.01); H03G 3/30 (2006.01); H04B 1/04 (2006.01)
CPC H03F 3/19 (2013.01) [H03G 3/3036 (2013.01); H04B 1/04 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H03G 2201/103 (2013.01); H03G 2201/307 (2013.01)] 27 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
an amplifier, comprising:
a first stage amplifier;
a second stage amplifier;
a configurable first stage bypass coupled between a first input and a first output of the first stage amplifier;
a configurable second stage bypass coupled between a second input and a second output of the second stage amplifier; and
a transistor coupled to a gate of the first stage amplifier and configured to provide a DC current to a common-gate transistor of the configurable first stage bypass.