US 12,451,842 B2
Variable transimpedance amplifier for low power, high dynamic range, high data rate linear
Gurpreet Singh Bhullar, Ottawa (CA)
Assigned to SEMTECH CORPORATION, Camarillo, CA (US)
Filed by SEMTECH CORPORATION, Camarillo, CA (US)
Filed on Dec. 12, 2022, as Appl. No. 18/079,840.
Prior Publication US 2024/0195360 A1, Jun. 13, 2024
Int. Cl. H03F 1/02 (2006.01); H03F 3/08 (2006.01); H03F 3/45 (2006.01)
CPC H03F 1/0211 (2013.01) [H03F 3/4508 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A variable transimpedance amplifier, comprising:
a first amplifier comprising:
a first bipolar junction transistor amplifier;
a first resistor connected in parallel with the first bipolar junction transistor amplifier; and
a first capacitor connected in parallel with the first bipolar junction transistor amplifier and the first resistor; and
a second amplifier comprising:
a second bipolar junction transistor amplifier;
a second resistor connected in parallel with the second bipolar junction transistor amplifier; and
a second capacitor connected in parallel with the second bipolar junction transistor amplifier and the second resistor;
wherein:
the first amplifier and the second amplifier are connected to an input node of the variable transimpedance amplifier in parallel;
a first output node of the first amplifier is an output node of the variable transimpedance amplifier, the output node configured to drive a circuit subsequent to the variable transimpedance amplifier; and
a second output node of the second amplifier is configured to be outside of the output node of the variable transimpedance amplifier, the second output node configured to be excluded from driving the circuit subsequent to the variable transimpedance amplifier.