US 12,451,816 B2
Sub-module of power conversion device
Yuki Miyazaki, Chuo-ku (JP); and Akira Sato, Chuo-ku (JP)
Assigned to TMEIC CORPORATION, Chuo-ku (JP)
Appl. No. 18/259,719
Filed by TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION, Chuo-ku (JP)
PCT Filed Nov. 5, 2021, PCT No. PCT/JP2021/040791
§ 371(c)(1), (2) Date Jun. 28, 2023,
PCT Pub. No. WO2023/079685, PCT Pub. Date May 11, 2023.
Prior Publication US 2024/0072679 A1, Feb. 29, 2024
Int. Cl. H02M 7/5387 (2007.01); H02M 7/00 (2006.01); H05K 7/20 (2006.01)
CPC H02M 7/003 (2013.01) [H02M 7/5387 (2013.01); H05K 7/20909 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A sub-module of a power conversion device, the sub-module comprising:
a first IGBT to an eighth IGBT;
a first drive circuit to a fourth drive circuit that drive the first IGBT to the eight IGBT;
a first laminated bus bar and a second laminated bus bar on which the first IGBT to the eight IGBT are mounted;
a first substrate to a fourth substrate on which the first drive circuit to the fourth drive circuit are mounted;
a housing frame for accommodating the first IGBT to the eight IGBT, the first drive circuit to the fourth drive circuit, the first laminated bus bar, the second laminated bus bar, and the first substrate to the fourth substrate; and
a first separation frame and a second separation frame for separating a space in which the first drive circuit to the fourth drive circuit and the first substrate to the fourth substrate are disposed from a space in which the first IGBT to the eight IGBT, the first laminated bus bar, and the second laminated bus bar are disposed; and
a cooling fin disposed in proximity to the first IGBT to the eighty IGBT,
wherein the first IGBT to the eighth IGBT are disposed between the cooling fin and the first laminated bus bar and between the cooling fin and the second laminated bus bar,
the first drive circuit drives the first IGBT and the second IGBT,
the second drive circuit drives the third IGBT and the fourth IGBT,
the fourth drive circuit drives the fifth IGBT and the sixth IGBT,
the fourth drive circuit drives the seventh IGBT and the eighth IGBT,
the first IGBT to the fourth IGBT are mounted on the first laminated bus bar,
the fifth IGBT to the eighth IGBT are mounted on the second laminated bus bar,
the first drive circuit, the second drive circuit, the third drive circuit, and the fourth drive circuit are mounted on the first substrate, the second substrate, the third substrate, and
the fourth substrate, respectively,
the housing frame accommodates the cooling fin, the first IGBT to the eighth IGBT, the first drive circuit to the fourth drive circuit, the first laminated bus bar, the second laminated bus bar, and the first substrate to the fourth substrate,
the cooling fin is disposed such that a depth direction of the cooling fin is perpendicular to a first surface and a second surface of the housing frame that face each other,
the cooling fin separates an inner space of the housing frame into a first space and a second space,
in the first space, the first IGBT to the fourth IGBT, the first laminated bus bar, the first substrate, the second substrate, the first drive circuit, and the second drive circuit are arranged in order from a side close to the cooling fin,
in the second space, the fifth IGBT to the eighth IGBT, the second laminated bus bar, the third substrate, the fourth substrate, the third drive circuit, and the fourth drive circuit are arranged in order from a side close to the cooling fin,
the first separation frame separates the first space into a first region and a second region,
in the first region, the first drive circuit, the second drive circuit, the first substrate, and the second substrate are disposed, and
in the second region, the first IGBT to the fourth IGBT and the first laminated bus bar are disposed, and
the second separation frame separates the second space into a third region and a fourth region,
in the third region, the third drive circuit, the fourth drive circuit, the third substrate, and the fourth substrate are disposed, and
in the fourth region, the fifth IGBT to the eighth IGBT and the second laminated bus bar are disposed.