US 12,451,670 B2
Light-emitting device
Hideki Kimura, Kanagawa (JP); Yoshiaki Watanabe, Kanagawa (JP); and Yoshinori Yamauchi, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/755,775
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Nov. 6, 2020, PCT No. PCT/JP2020/041560
§ 371(c)(1), (2) Date May 6, 2022,
PCT Pub. No. WO2021/095660, PCT Pub. Date May 20, 2021.
Claims priority of application No. 2019-207371 (JP), filed on Nov. 15, 2019.
Prior Publication US 2022/0393435 A1, Dec. 8, 2022
Int. Cl. H01S 5/183 (2006.01); H01S 5/22 (2006.01); H01S 5/30 (2006.01); H01S 5/323 (2006.01)
CPC H01S 5/18361 (2013.01) [H01S 5/18313 (2013.01); H01S 5/2202 (2013.01); H01S 5/2226 (2013.01); H01S 5/305 (2013.01); H01S 5/323 (2013.01)] 15 Claims
OG exemplary drawing
 
15. A light-emitting device, comprising:
a light emission section including a stack structure, wherein
the stack structure includes:
an active layer,
a first reflector, and
a second reflector,
the active layer is configured to perform light emission by current injection, and
the active layer is between the first reflector and the second reflector in a specific direction;
a separation groove symmetrically around the light emission section,
wherein the separation groove extends from a light emission surface of the stack structure in the specific direction;
a current confinement layer between the light emission surface and the active layer,
wherein the current confinement layer includes:
an unoxidized region, and
an annular oxidized region that surrounds the unoxidized region in
an in-plane direction perpendicular to the specific direction; and
a high resistance region in the stack structure, wherein
the high resistance region is on an outer side of the separation groove,
the high resistance region has an electrical resistance higher than that of the light emission section,
the high resistance region includes an impurity element,
a content of the impurity element has a concentration distribution in the specific direction, and
the concentration distribution of the content of the impurity element has a peak at a depth, in the specific direction, at which the current confinement layer is in the light-emitting device.