US 12,451,666 B2
Laser heat sinking for integrating laser diode into recording heads at wafer level
Fadi El Hallak, Londonderry (GB); Bryn John Howells, Londonderry (GB); Michael Gerald Boyle, Derry (IE); Frank Anthony McGinnity, Derry (IE); and Martin Liam McGarry, Ballymena (IE)
Assigned to SEAGATE TECHNOLOGY LLC, Fremont, CA (US)
Filed by Seagate Technology LLC, Fremont, CA (US)
Filed on Mar. 30, 2022, as Appl. No. 17/657,164.
Prior Publication US 2023/0318257 A1, Oct. 5, 2023
Int. Cl. H01S 5/024 (2006.01); G11B 5/127 (2006.01); G11B 5/40 (2006.01); H01S 5/026 (2006.01); G11B 5/00 (2006.01)
CPC H01S 5/02476 (2013.01) [H01S 5/026 (2013.01); G11B 2005/0021 (2013.01); G11B 5/127 (2013.01); G11B 5/40 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method comprising the steps of:
forming a recording head comprising a waveguide on a first substrate;
forming a heat sink on the first substrate;
forming a bleed resistor on the first substrate, wherein the bleed resistor is coupled to the heat sink and the substrate;
planarizing a top surface of the heat sink to form a planarized heat sink; and
transfer printing a laser diode formed on a second substrate onto the planarized heat sink to form an integrated laser diode.