US 12,451,468 B1
III-N devices with improved reliability
Carl Joseph Neufeld, Goleta, CA (US); David Michael Rhodes, Santa Barbara, CA (US); Likun Shen, Goleta, CA (US); and Ronald Avrom Barr, Santa Barbara, CA (US)
Assigned to Transphorm Technology, Inc., Goleta, CA (US)
Filed by Transphorm Technology, Inc., Goleta, CA (US)
Filed on Aug. 23, 2022, as Appl. No. 17/894,080.
Claims priority of provisional application 63/237,015, filed on Aug. 25, 2021.
Int. Cl. H01L 25/07 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H10D 30/47 (2025.01)
CPC H01L 25/072 (2013.01) [H01L 23/49844 (2013.01); H01L 24/46 (2013.01); H01L 24/49 (2013.01); H10D 30/47 (2025.01); H10D 30/471 (2025.01); H01L 2224/46 (2013.01); H01L 2224/48135 (2013.01); H01L 2224/48157 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49112 (2013.01); H01L 2224/4912 (2013.01)] 9 Claims
OG exemplary drawing
 
1. An electronic component, comprising:
a first terminal, a second terminal, and a third terminal extending from a component package; and
a depletion-mode III-N transistor, and an enhancement-mode transistor arranged in the package; wherein
a first gate electrode of the enhancement-mode transistor is electrically connected to the first terminal, a first source electrode of the enhancement-mode transistor and a second gate electrode of the depletion-mode III-N transistor are electrically connected to the second terminal, a first drain electrode of the enhancement-mode transistor is electrically connected to a second source electrode of the depletion-mode III-N transistor, and a second drain electrode of the depletion-mode III-N transistor is electrically connected to the third terminal; and
the second drain electrode comprises multiple drain pads each sequentially a further distance from the third terminal, wherein a wire-bond extends from each drain pad to the third terminal, each wire-bond comprising a length; wherein
a diameter of a longest wire-bond is greater than a diameter of a shortest wire-bond.