US 12,451,461 B2
Chemical bonding method and joined structure
Takehito Shimatsu, Sendai (JP); Miyuki Uomoto, Sendai (JP); Kazuo Miyamoto, Saitama (JP); Yoshikazu Miyamoto, Saitama (JP); Nobuhiko Katoh, Kawasaki (JP); Takayuki Moriwaki, Kawasaki (JP); and Takayuki Saitoh, Kawasaki (JP)
Assigned to TOHOKU UNIVERSITY, Sendai (JP); and CANON ANELVA CORPORATION, Kawasaki (JP)
Filed by TOHOKU UNIVERSITY, Sendai (JP); and CANON ANELVA CORPORATION, Kawasaki (JP)
Filed on Feb. 4, 2022, as Appl. No. 17/592,881.
Application 17/592,881 is a continuation of application No. PCT/JP2020/033471, filed on Sep. 3, 2020.
Claims priority of application No. 2019-162065 (JP), filed on Sep. 5, 2019; and application No. 2020-098031 (JP), filed on Jun. 4, 2020.
Prior Publication US 2022/0157770 A1, May 19, 2022
Int. Cl. C23C 14/34 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/83 (2013.01) [C23C 14/08 (2013.01); C23C 14/34 (2013.01); C23C 14/5893 (2013.01); H01L 24/32 (2013.01); H01L 24/29 (2013.01); H01L 2224/29186 (2013.01); H01L 2224/29188 (2013.01); H01L 2224/29541 (2013.01); H01L 2224/2957 (2013.01); H01L 2224/29687 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/83097 (2013.01); H01L 2224/83099 (2013.01); H01L 2224/8383 (2013.01); H01L 2224/83896 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A chemical bonding method in which substrates to be bonded are two substrates composed of the same materials or a combination of different materials, selected from pure metals, alloys, or Si, comprising, in a vacuum vessel, forming amorphous oxide thin films having a state of oxygen deficiency or supersaturated oxygen compared to stoichiometric composition on bonding surfaces of the two substrates each having the bonding surface by magnetron sputtering involving quenching of raw material atoms on the bonding surfaces,
during formation of the amorphous oxide thin films, the number of vacancy defects inside the films being increased by controlling the oxygen deficiency or the supersaturated oxygen whereby increasing atomic mobility, and following the formation of the amorphous oxide thin films, superimposing the two substrates so that the amorphous oxide thin films formed on the two substrates are in contact with each other,
whereby causing movement of atoms at a bonding interface between the amorphous oxide thin films by the increased atomic mobility of the amorphous oxide thin films in which the number of the vacancy defects inside the films is increased, and
thereby causing chemical bonding involving atomic diffusion at the bonding interface to bond the two substrates.