| CPC H01L 23/573 (2013.01) [H01L 22/34 (2013.01); H01L 23/528 (2013.01); H01L 23/562 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/49 (2013.01); H01L 2224/08237 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73215 (2013.01)] | 26 Claims |

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1. A method of forming a bonded structure, the method comprising:
patterning a disruption structure into at least one of a semiconductor element having active circuitry and an obstructive element including an obstructive material disposed over at least a portion of the active circuitry, the obstructive material configured to obstruct external access to the active circuitry; and
directly bonding the obstructive element to the semiconductor element without an adhesive, the disruption structure configured to disrupt functionality of the semiconductor element upon debonding of the obstructive element from the semiconductor element.
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