US 12,451,442 B2
Methods of forming microelectronic devices including support contact structures, and related microelectronic devices, memory devices, and electronic systems
Yiping Wang, Boise, ID (US); and Sandra L. Tagg, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 1, 2022, as Appl. No. 17/805,009.
Prior Publication US 2023/0395525 A1, Dec. 7, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 23/535 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 23/562 (2013.01) [H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising a vertically alternating sequence of conductive material and insulative material arranged in tiers, the stack structure divided into blocks separated from one another by dielectric-filled slot structures, at least one of the blocks comprising:
staircase structures having steps comprising horizontal ends of at least some of the tiers of the stack structure;
crest regions horizontally interposed between horizontally neighboring pairs of the staircase structures; and
bridge regions horizontally interposed between staircase structures and the dielectric-filled slot structures, the bridge regions horizontally extending from and between the crest regions; and
contact structures extending through the tiers, the contact structures comprising:
live contact structures within the crest regions of the blocks, the contact structures comprising conductive material extending through the tiers of the stack structure and to a source tier; and
support contact structures within the crest regions of the blocks, the support contact structures comprising polycrystalline silicon material extending through the tiers of the stack structure.