US 12,451,433 B2
Semiconductor device with vertical patterns and data storage system including the same
Sujin Park, Gwangmyeong-si (KR); Heesung Kam, Anyang-si (KR); Byungjoo Go, Hwaseong-si (KR); and Hyunju Sung, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 5, 2024, as Appl. No. 18/628,233.
Application 18/628,233 is a continuation of application No. 17/373,902, filed on Jul. 13, 2021, granted, now 11,984,404.
Claims priority of application No. 10-2020-0118177 (KR), filed on Sep. 15, 2020.
Prior Publication US 2024/0250034 A1, Jul. 25, 2024
Int. Cl. H01L 23/535 (2006.01); H01L 25/18 (2023.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01)
CPC H01L 23/535 (2013.01) [H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02); H01L 25/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a stack structure including interlayer insulating layers and horizontal layers alternately stacked in a vertical direction;
a first separation structure and a second separation structure penetrating through the stack structure in the vertical direction;
a first vertical pattern and a second vertical pattern penetrating through the stack structure and parallel to each other between the first and second separation structures;
a third vertical pattern and a fourth vertical pattern penetrating through the stack structure and parallel to each other between the first and second separation structures;
a fifth vertical pattern and a sixth vertical pattern between the first vertical pattern and the second vertical pattern;
a seventh vertical pattern between the first vertical pattern and the first separation structure;
an eighth vertical pattern between the second vertical pattern and the second separation structure; and
a plurality of contact plugs penetrating through the stack structure in the vertical direction and between the first separation structure and the second separation structure,
wherein each of the first and second separation structures extends in a first direction perpendicular to the vertical direction,
wherein each of the first and second vertical patterns extends in the first direction,
wherein each of the third and fourth vertical patterns extends in the first direction,
wherein a length of at least one of the first and second separation structures in the first direction is greater than a length of each of the first, second, third and fourth vertical patterns in the first direction,
wherein the length of each of the first, second, third and fourth vertical patterns in the first direction is greater than a width of each of the fifth and sixth vertical patterns in the first direction,
wherein the first vertical pattern is adjacent to the first separation structure, and the second vertical pattern is adjacent to the second separation structure,
wherein the third vertical pattern is adjacent to the first separation structure, and the fourth vertical pattern is adjacent to the second separation structure,
wherein the fifth and sixth vertical patterns are between the first vertical pattern and the second vertical pattern, and
wherein a first distance between the first vertical pattern and the second vertical pattern is different from a second distance between the third vertical pattern and the fourth vertical pattern.