US 12,451,432 B2
Multi-layer topological interconnect with proximal doping layer
Ching-Tzu Chen, Ossining, NY (US); Christian Lavoie, Pleasantville, NY (US); Guy M. Cohen, Westchester, NY (US); Utkarsh Bajpai, Delmar, NY (US); Nicholas Anthony Lanzillo, Wynantskill, NY (US); Teodor Krassimirov Todorov, Yorktown Heights, NY (US); Oki Gunawan, Westwood, NJ (US); Nathan P. Marchack, New York, NY (US); and Peter Kerns, Sandy Hook, CT (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Sep. 29, 2022, as Appl. No. 17/956,334.
Prior Publication US 2024/0113024 A1, Apr. 4, 2024
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/53209 (2013.01) [H01L 21/76852 (2013.01); H01L 21/76867 (2013.01); H01L 21/76885 (2013.01); H01L 23/53223 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 23/5329 (2013.01); Y10T 428/24479 (2015.01)] 9 Claims
OG exemplary drawing
 
1. An interconnect structure comprising:
a plurality of conducting layers comprised of topological insulator selected from the group consisting of Bi2Se3, (Bi(1−x)Sbx)2Te3, Bi1.1Sb0.9Te2S, and combinations thereof; and
a charge carrier doping layer present directly between the plurality of conducting layers of topological insulator, wherein the charge carrier doping layer has a charge carrier density greater than the topological insulator of the plurality of conducting layers.
 
3. An interconnect structure comprising:
at least one conducting layer comprising a conductive material selected from the group consisting of topological semi-metals, topological insulator and combinations thereof; and
discontinuous islands of charge carrier dopant materials present as patches on only a portion of at least one surface of the at least one conducting layer, wherein the discontinuous islands of charge carrier dopant materials have a charge carrier density greater than the conductive material of at least one conducting layer, and follow grain boundaries of the charge carrier dopant materials.
 
8. An interconnect structure comprising:
at least one conducting layer comprised of a core of a conductive material selected from the group consisting of Bi2Se3, Bi2Te3, Sb2Te3, (Bi(1−x)Sbx)2Te3, Bi1.1Sb0.9Te2S, Bi1−xSbx and combinations thereof, and
a cladding layer of charge carrier dopants completely surrounding the conductive core, wherein the cladding layer of charge carrier dopants have a charge carrier density greater than the conductive material of the at least one conducting layer.