| CPC H01L 23/5226 (2013.01) [H01L 23/5283 (2013.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01)] | 20 Claims |
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1. A semiconductor device comprising:
a substrate including a first surface and a second surface opposite to each other in a vertical direction that is perpendicular to the first surface;
a first fin-shaped pattern provided at the first surface of the substrate and extending in a first horizontal direction that is parallel to the first surface;
a first source/drain pattern disposed on the first fin-shaped pattern and connected to the first fin-shaped pattern;
a first source/drain contact disposed on the first source/drain pattern and connected to the first source/drain pattern;
a buried conductive pattern extending through the substrate and connected to the first source/drain contact;
a contact connection via disposed between the first source/drain contact and the buried conductive pattern, wherein the contact connection via is directly connected to the first source/drain contact; and
a back wiring line disposed on the second surface of the substrate and connected to the buried conductive pattern,
wherein a width in a second horizontal direction of the contact connection via increases as the contact connection via extends away from the second surface of the substrate,
wherein the second horizontal direction is parallel to the first surface and different from the first horizontal direction, and
wherein a width in the second horizontal direction of the first source/drain contact decreases as the first source/drain contact extends away from the second surface of the substrate.
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