US 12,451,419 B2
Wafer-on-wafer cascode HEMT device
Haw-Yun Wu, Zhubei (TW); Chen-Bau Wu, Zhubei (TW); Jiun-Lei Yu, Zhudong Township (TW); and Chun-Lin Tsai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 1, 2022, as Appl. No. 17/816,525.
Claims priority of provisional application 63/363,503, filed on Apr. 25, 2022.
Prior Publication US 2023/0343693 A1, Oct. 26, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 25/07 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 64/23 (2025.01)
CPC H01L 23/49844 (2013.01) [H01L 23/5386 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/19 (2013.01); H01L 24/25 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/071 (2013.01); H10D 30/015 (2025.01); H10D 30/47 (2025.01); H10D 64/258 (2025.01); H01L 2224/113 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/2511 (2013.01); H01L 2224/2541 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73259 (2013.01); H01L 2924/13064 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first semiconductor structure comprising a first high electron mobility transistor (HEMT) device on a first side of a first substrate, wherein the first HEMT device comprises a first gate, a first source, and a first drain;
a second semiconductor structure stacked above and bonded to the first semiconductor structure, wherein the second semiconductor structure comprises a second HEMT device and a third HEMT device on a first side of a second substrate, wherein the second HEMT device comprises a second gate, a second source, and a second drain that is electrically connected to the first source, wherein the third HEMT device comprises a third gate, a third source, and a third drain that is electrically connected to the first gate, wherein the first side of the first substrate faces the first side of the second substrate; and
an underfill sandwiched between the first semiconductor structure and the second semiconductor structure.