US 12,451,417 B2
Semiconductor package and manufacturing method thereof
Tzuan-Horng Liu, Taoyuan (TW); Hao-Yi Tsai, Hsinchu (TW); Kuo-Lung Pan, Hsinchu (TW); and Tsung-Yuan Yu, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 4, 2022, as Appl. No. 17/880,689.
Prior Publication US 2024/0047332 A1, Feb. 8, 2024
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/16 (2023.01)
CPC H01L 23/49833 (2013.01) [H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/162 (2013.01); H01L 21/4853 (2013.01); H01L 2224/08235 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73251 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/37001 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a first tier comprising:
a first die and a second die disposed side by side and separated from each other by a first insulating encapsulation, and a surface of the first insulating encapsulation being substantially leveled with surfaces of first die connectors of the first die and truncated spherical surfaces of second die connectors of the second die; and
a first redistribution structure underlying the surfaces of the first insulating encapsulation and the first die connectors of the first die and the truncated spherical surfaces of the second die connectors of the second die, the first redistribution structure comprising a dielectric layer and a conductive via in the dielectric layer, wherein the conductive via is in contact with a first portion of the truncated spherical surface of one of the second die connectors of the second die, the dielectric layer is in contact with a second portion of the truncated spherical surface of the one of the second die connectors of the second die, and the second portion surrounds the first portion; and
a second tier underlying the first tier and comprising:
third dies disposed below the first redistribution structure, electrically coupled to the first die through the first redistribution structure, and laterally covered by a second insulating encapsulation; and
through insulating vias (TIVs) penetrating through the second insulating encapsulation and electrically coupled to the second die through the first redistribution structure.