US 12,451,411 B2
Structure with air gaps extending from dielectric liner around through semicondcutor via
Dewei Xu, Clifton Park, NY (US); Zhuojie Wu, Port Chester, NY (US); and Daniel Smith, Ballston Spa, NY (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Jan. 13, 2023, as Appl. No. 18/154,481.
Prior Publication US 2024/0243037 A1, Jul. 18, 2024
Int. Cl. H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01)] 20 Claims
OG exemplary drawing
 
15. A method comprising:
forming a through semiconductor via (TSV) in a frontside of a semiconductor substrate and a dielectric liner surrounding the TSV and between the TSV and the semiconductor substrate;
forming a plurality of elongated air gaps in the semiconductor substrate adjacent to the dielectric liner, each air gap having a first sidewall contacting the dielectric liner and a second sidewall distanced from the dielectric liner and immediately contacting the semiconductor substrate; and
planarizing a backside of the semiconductor substrate to complete the TSV.