US 12,451,409 B1
Semiconductor and other electronic devices having integrated cooling systems and associated systems and methods
Bruno Lorenzi, Perugia (IT); Gianmarco Corbucci, Perugia (IT); and Maurizio Miozza, Seattle, WA (US)
Assigned to GemaTEG Inc., Bellevue, WA (US)
Filed by GemaTEG Inc., Bellevue, WA (US)
Filed on May 2, 2025, as Appl. No. 19/197,740.
Application 19/197,740 is a continuation in part of application No. 17/318,873, filed on May 12, 2021.
Claims priority of provisional application 63/023,774, filed on May 12, 2020.
Int. Cl. H01L 23/38 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 80/00 (2023.01)
CPC H01L 23/38 (2013.01) [H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H10B 80/00 (2023.02); H01L 2225/06541 (2013.01); H01L 2225/06589 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A system-in-package device, comprising:
a base substrate;
a processing device integrated with the base substrate;
a high-bandwidth memory device integrated with the base substrate and electrically coupled to the processing device through the base substrate; and
a package cooling device thermally coupled to the processing device and the high-bandwidth memory device, the package cooling device comprising:
a first heat spreader thermally coupled to an upper surface of the processing device;
a second heat spreader thermally coupled to an upper surface of the high-bandwidth memory device;
a thermoelectric cooling device positioned between and thermally coupled to a portion of the first heat spreader and the second heat spreader, wherein the thermoelectric cooling device is positioned to transport heat from the second heat spreader to the first heat spreader; and
a heat exchanger thermally coupled to the first heat spreader, wherein the heat exchanger is positioned to absorb heat from the first heat spreader; wherein
the high-bandwidth memory device is a first high-bandwidth memory device integrated with the base substrate adjacent to a first side of the processing device;
the thermoelectric cooling device is a first thermoelectric cooling device positioned between a first portion of the first heat spreader and the second heat spreader;
the system-in-package device further comprises a second high-bandwidth memory device integrated with the base substrate adjacent to a second side of the processing device and electrically coupled to the processing device through the base substrate; and
the package cooling device further comprises:
a third heat spreader thermally coupled to an upper surface of the second high-bandwidth memory device; and
a second thermoelectric cooling device positioned between and thermally coupled to a second portion of the first heat spreader and the third heat spreader, wherein the second thermoelectric cooling device is positioned to transport heat from the third heat spreader to the first heat spreader.
 
9. A package cooling device for a semiconductor device, the package cooling device comprising:
a first heat spreader thermally couplable to an upper surface of a processing device;
a second heat spreader thermally couplable to an upper surface of a high-bandwidth memory device, wherein the second heat spreader is positioned at least partially beneath a portion of the first heat spreader and spaced apart from the first heat spreader by a gap;
a thermoelectric cooling device positioned in the gap, wherein a first side of the thermoelectric cooling device is thermally coupled to the first heat spreader and a second side of the thermoelectric cooling device is thermally coupled to the second heat spreader; and
a heat exchanger carried by the first heat spreader, wherein the heat exchanger is thermally coupled to the first heat spreader to absorb heat from the first heat spreader; further wherein
the portion of the first heat spreader includes a central region, a first peripheral region adjacent to a first side of the central region, and a second peripheral region adjacent to a second side of the central region;
the second heat spreader is positioned at least partially beneath the first peripheral region, wherein the second heat spreader is thermally couplable to an upper surface of a first high-bandwidth memory device, and wherein the gap is a first gap;
the thermoelectric cooling device is a first thermoelectric cooling device; and
the package cooling device further comprises:
a third heat spreader thermally couplable to an upper surface of a second high-bandwidth memory device, wherein the third heat spreader is positioned at least partially beneath the second peripheral region of the first heat spreader and spaced apart from the first heat spreader by a second gap; and
a second thermoelectric cooling device positioned in the second gap, wherein a first side of the second thermoelectric cooling device is thermally coupled to the first heat spreader and a second side of the thermoelectric cooling device is thermally coupled to the third heat spreader.