| CPC H01L 23/3735 (2013.01) [H01L 23/367 (2013.01); H01L 24/48 (2013.01); H01L 2224/48227 (2013.01)] | 18 Claims |
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1. A semiconductor module, comprising:
a semiconductor device having a plurality of upper surface electrodes including at least a main electrode disposed on an upper surface of the semiconductor device;
a laminate substrate including an insulating plate, and a plurality of circuit boards that includes a first circuit board and a second circuit board that are arranged on an upper surface of the insulating plate, the semiconductor device being disposed on the first circuit board;
a main terminal electrically connected to the main electrode;
an auxiliary terminal electrically connected to one of the plurality of upper surface electrodes via a first auxiliary wiring or a second auxiliary wiring; and
a main current wiring member electrically connecting the main electrode to the main terminal, wherein
a main current path through which a main current flows is provided between the main electrode and the main terminal, the main current flowing to the main terminal from the main electrode via the main current wiring member and the second circuit board in this order, and
a first path through which a first control current flows and a second path through which a second control current flows are provided between the one of the plurality of upper surface electrodes and the auxiliary terminal, the first control current flowing to the auxiliary terminal from the one of the plurality of upper surface electrodes via the first auxiliary wiring, the second control current flowing to the auxiliary terminal from the one of the plurality of upper surface electrodes via the main current wiring member, the second circuit board and the second auxiliary wiring in this order.
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