US 12,451,404 B2
Copper-ceramic bonded body, insulated circuit board, method for producing copper-ceramic bonded body, and method for producing insulated circuit board
Nobuyuki Terasaki, Saitama (JP)
Assigned to MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
Appl. No. 17/781,250
Filed by MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
PCT Filed Nov. 30, 2020, PCT No. PCT/JP2020/044547
§ 371(c)(1), (2) Date May 31, 2022,
PCT Pub. No. WO2021/112046, PCT Pub. Date Jun. 10, 2021.
Claims priority of application No. 2019-221364 (JP), filed on Dec. 6, 2019; and application No. 2020-194601 (JP), filed on Nov. 24, 2020.
Prior Publication US 2023/0034784 A1, Feb. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/373 (2006.01); B32B 7/12 (2006.01); B32B 9/00 (2006.01); B32B 9/04 (2006.01); B32B 15/20 (2006.01); B32B 37/18 (2006.01); C04B 37/02 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/46 (2006.01); H05K 1/03 (2006.01); H05K 3/38 (2006.01)
CPC H01L 23/3735 (2013.01) [B32B 7/12 (2013.01); B32B 9/005 (2013.01); B32B 9/041 (2013.01); B32B 15/20 (2013.01); B32B 37/18 (2013.01); C04B 37/023 (2013.01); H01L 21/4857 (2013.01); H05K 1/0306 (2013.01); H05K 3/381 (2013.01); H05K 3/382 (2013.01); H05K 3/388 (2013.01); B32B 2250/02 (2013.01); B32B 2255/205 (2013.01); B32B 2311/00 (2013.01); B32B 2311/12 (2013.01); B32B 2315/02 (2013.01); B32B 2457/08 (2013.01); C04B 2237/12 (2013.01); C04B 2237/368 (2013.01); C04B 2237/407 (2013.01); H01L 23/46 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/0133 (2013.01); H01L 2924/10253 (2013.01); H05K 2203/06 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A copper-ceramic bonded body comprising:
a copper member made of copper or a copper alloy; and
a ceramic member made of silicon nitride,
wherein the copper member and the ceramic member are bonded to each other,
only Mg—N compound phase is present at a bonded interface between the copper member and the ceramic member, wherein assuming that a total amount of Mg, N, and Si in the Mg—N compound phase is 100 atomic %, a Si concentration is 25 atomic % or less,
a maximum length of the Mg—N compound phase is less than 100 nm, and
in a unit length along the bonded interface, a number density of the Mg—N compound phase in a range of a length of 10 nm or more and less than 100 nm is less than 8 pieces/μm.