US 12,451,403 B2
Power module and manufacturing method thereof
Hsin-Han Lin, Hsinchu County (TW); and Tai-Jyun Yu, Taoyuan (TW)
Assigned to Industrial Technology Research Institute, Hsinchu (TW)
Filed by Industrial Technology Research Institute, Hsinchu (TW)
Filed on Apr. 28, 2022, as Appl. No. 17/732,428.
Prior Publication US 2023/0352361 A1, Nov. 2, 2023
Int. Cl. H01L 23/373 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/07 (2006.01)
CPC H01L 23/3735 (2013.01) [H01L 21/4857 (2013.01); H01L 23/5383 (2013.01); H01L 23/49811 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 25/072 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48105 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/1517 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A power module, comprising:
an insulating substrate, having a first surface and a second surface opposite to each other;
a first conductive layer and a second conductive layer, disposed on the first surface and electrically separated from each other;
a first thermal interface material layer, disposed on the first conductive layer;
a third conductive layer, disposed on the first thermal interface material layer;
a first chip, disposed on the third conductive layer and electrically connected to the third conductive layer;
a conductive adhesion layer, disposed between the first chip and the third conductive layer;
a second chip, disposed on the second conductive layer and electrically connected to the second conductive layer; and
a thermal conductive layer, disposed on the second surface,
wherein the first thermal interface material layer and the third conductive layer constitute an insulating metal substrate, and the insulating metal substrate is insulated from an underlying layer by the first thermal interface material layer,
wherein the first thermal interface material layer is located between the first conductive layer and the third conductive layer, and is in contact with the first conductive layer and the third conductive layer, and
wherein an area of the first thermal interface material layer is less than an area of the first conductive layer, and less than an area of the insulating substrate.
 
10. A manufacturing method of a power module, comprising:
providing an insulating substrate with a first surface and a second surface opposite to each other;
forming a first conductive layer and a second conductive layer on the first surface, wherein the first conductive layer and the second conductive layer are electrically separated from each other;
forming a thermal conductive layer on the second surface;
forming a first thermal interface material layer and a third conductive layer in sequence on the first conductive layer;
forming a conductive adhesion layer and a first chip in sequence on the third conductive layer, so that the first chip is electrically connected to the third conductive layer; and
forming a second chip on the second conductive layer, wherein the second chip is electrically connected to the second conductive layer,
wherein the first thermal interface material layer and the third conductive layer constitute an insulating metal substrate, and the insulating metal substrate is insulated from an underlying layer by the first thermal interface material layer,
wherein the first thermal interface material layer is located between the first conductive layer and the third conductive layer, and is in contact with the first conductive layer and the third conductive layer, and
wherein an area of the first thermal interface material layer is less than an area of the first conductive layer, and less than the area of the insulating substrate.