| CPC H01L 23/3733 (2013.01) [H01L 21/4882 (2013.01); H01L 23/3672 (2013.01); H01L 23/3675 (2013.01); H01L 23/3735 (2013.01); H01L 24/29 (2013.01); G01R 31/2874 (2013.01); H01L 23/42 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29105 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29118 (2013.01); H01L 2224/29205 (2013.01); H01L 2224/29209 (2013.01); H01L 2224/29305 (2013.01); H01L 2224/29309 (2013.01); H01L 2224/29311 (2013.01); H01L 2224/29318 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32502 (2013.01); H01L 2224/32506 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/83201 (2013.01); H01L 2224/83805 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/0133 (2013.01); H01L 2924/0134 (2013.01); H01L 2924/16235 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/1632 (2013.01); H01L 2924/16598 (2013.01)] | 15 Claims |

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1. A semiconductor assembly, comprising:
a semiconductor die;
a heat exchanger; and
a thermal interface material (TIM) alloy bonding the semiconductor die to the heat exchanger without a separate metallization layer on a surface of the semiconductor die or a surface of the heat exchanger, the TIM alloy comprising:
a first liquid metal foam in touching relation with the surface of the semiconductor die,
a second liquid metal foam in touching relation with the surface of the heat exchanger, and
a thermally conductive metal foil between and in touching relation with the first liquid metal foam and the second liquid metal foam, the thermally conductive metal foil comprising multiple first regions and multiple second regions, the first regions having a first thickness and the second regions having a second thickness greater than the first thickness and forming a patterned surface on the thermally conductive metal foil.
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