| CPC H01L 22/34 (2013.01) [G01R 31/52 (2020.01); H01L 22/14 (2013.01); H10D 30/475 (2025.01); H10D 30/4755 (2025.01); H10D 64/111 (2025.01); H10D 64/112 (2025.01); G01R 31/2621 (2013.01); H10D 62/8503 (2025.01)] | 20 Claims |
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17. A semiconductor device, comprising:
a transistor comprising:
a plurality of layers, wherein each of the plurality of layers has at least one Group III-V compound material;
a gate electrode operatively coupled to at least one of the plurality of layers;
a source electrode disposed on a first side of the gate electrode;
a drain electrode disposed on a second side of the gate electrode;
a field plate disposed between the gate electrode and the drain electrode; and
a plurality of conductive lines disposed above the gate electrode, the source electrode, and the drain electrode;
a plurality of test structures, wherein each of the test structures, each including a first metal pattern and a second metal pattern, is configured to emulate at least one of the gate electrode, the source electrode, the drain electrode, the field plate, or at least one of the plurality of conductive lines; and
a charge pump connected to one of the corresponding first metal pattern or the corresponding second metal pattern of at least one of the test structures.
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