| CPC H01L 21/78 (2013.01) [H10B 43/27 (2023.02); H10B 43/40 (2023.02); H10D 84/01 (2025.01)] | 29 Claims |
|
1. A semiconductor device comprising;
a first layer stack including alternately stacked first material layers and second material layers over a semiconductor substrate;
first crack propagation guides filling trenches, the trenches substantially penetrating the first layer stack;
a second layer stack including alternately stacked third material layers and fourth material layers on the first layer stack and the first crack propagation guides; and
second crack propagation guides filling openings, the openings substantially penetrating the second layer stack,
wherein the semiconductor substrate includes a chip region and the scribe lane region,
wherein cracks generated in a portion of the scribe lane region of the semiconductor substrate; and
wherein the cracks propagate to separate a semiconductor chip with the chip region from the semiconductor substrate.
|