US 12,451,392 B2
Methods for seam repair and semiconductor structure manufactured thereof
Kenichi Sano, Hsinchu (TW); Chin-Hsiang Lin, Hsinchu (TW); Hsu-Kai Chang, Hsinchu (TW); and Pinyen Lin, Rochester, NY (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Feb. 7, 2023, as Appl. No. 18/106,680.
Claims priority of provisional application 63/410,353, filed on Sep. 27, 2022.
Prior Publication US 2024/0105500 A1, Mar. 28, 2024
Int. Cl. H01L 21/762 (2006.01); H01L 21/768 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H01L 21/76229 (2013.01) [H01L 21/76883 (2013.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01)] 20 Claims
OG exemplary drawing
 
10. A method of forming a semiconductor structure, comprising:
forming a first fin structure and a second fin structure, wherein a trench is formed between the first and second fin structures;
conformally depositing a first dielectric material to fill the trench, wherein a central seam is formed in the first dielectric material;
forming a patch layer in the central seam of the first dielectric material, comprising:
exposing the first dielectric material to a gas mixture comprising a carrier and a seam repairing precursor; and
converting the carrier to a super critical fluid phase; and
etching back a portion of the first dielectric material to form a forksheet structure including the first and second fin structure and the first dielectric material; and
forming epitaxial source/drain regions adjacent the forksheet structure.