US 12,451,375 B2
Substrate processing apparatus, method of manufacturing semiconductor device and method of processing substrate support
Keita Ichimura, Toyama (JP); and Yukinori Aburatani, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Sep. 16, 2021, as Appl. No. 17/477,079.
Application 17/477,079 is a continuation of application No. PCT/JP2020/011443, filed on Mar. 16, 2020.
Claims priority of application No. 2019-055551 (JP), filed on Mar. 22, 2019.
Prior Publication US 2022/0005712 A1, Jan. 6, 2022
Int. Cl. H01L 21/67 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/67103 (2013.01) [H01L 21/02269 (2013.01); H01L 21/6719 (2013.01); H01L 21/68757 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a process chamber in which a substrate is processed;
a substrate support configured to support the substrate in the process chamber;
a heater configured to heat the substrate supported by the substrate support; and
a heat processing chamber different from the process chamber,
wherein the substrate support is made of an aluminum alloy,
a surface of the substrate support is coated by a coating film of aluminum oxide by heating the surface of the substrate support in the heat processing chamber to a predetermined first temperature under an atmospheric atmosphere before the substrate is processed in the process chamber while being held by the substrate support and maintaining a temperature of the surface of the substrate support at the predetermined first temperature for a predetermined time under the atmospheric atmosphere in the heat processing chamber.