| CPC H01L 21/565 (2013.01) [H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/561 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 24/19 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/73267 (2013.01)] | 20 Claims |
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1. A semiconductor structure, comprising:
a core substrate comprising a core layer, at least one first build-up layer on a first side of the core layer, and at least one second build-up layer on a second side of the core layer opposite the first side, the core substrate having a first outermost sidewall and a second outermost sidewall;
an encapsulant surrounding the first outermost sidewall and the second outermost sidewall, respectively, the encapsulant having a third outermost sidewall adjacent the first outermost sidewall and having a fourth outermost sidewall adjacent the second outermost sidewall;
a first redistribution structure comprising a first dielectric layer and a first plurality of conductive features, the first redistribution structure being separate from and electrically connected to the core substrate by a plurality of external connection joints, wherein the first redistribution structure has a fifth outermost sidewall that extends laterally beyond the first outermost sidewall of the core substrate and that is co-linear with the third outermost sidewall of the encapsulant, and further has a sixth outermost sidewall that extends laterally beyond the second outermost sidewall of the core substrate and that is co-linear with the fourth outermost sidewall of the encapsulant;
a local interconnect component disposed on the first redistribution structure, sidewalls of the local interconnect component being surrounded by an underfill, the local interconnect component being spaced apart from the core substrate by the first redistribution structure, the local interconnect component comprising:
a second plurality of conductive features on a first side of the local interconnect component, the first side physically contacting the first redistribution structure, each of the first plurality of conductive features being physically and electrically coupled to respective conductive features of the second plurality of conductive features; and
a third plurality of conductive features and a fourth plurality of conductive features, the third plurality of conductive features and the fourth plurality of conductive features being on a second side of the local interconnect component opposite the first side; and
a first interconnect structure over the second side of the local interconnect component, the first interconnect structure comprising a fifth plurality of conductive features and a sixth plurality of conductive features, each conductive feature of the third plurality of conductive features being bonded to a respective conductive feature of the fifth plurality of conductive features, each conductive feature of the fourth plurality of conductive features being bonded to a respective conductive feature of the sixth plurality of conductive features.
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