US 12,451,361 B2
Plasma processing method, plasma processing apparatus, and plasma processing system
Takahiro Yonezawa, Miyagi (JP); and Sho Kumakura, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 22, 2022, as Appl. No. 17/846,048.
Claims priority of application No. 2021-103419 (JP), filed on Jun. 22, 2021; and application No. 2022-092564 (JP), filed on Jun. 7, 2022.
Prior Publication US 2022/0406609 A1, Dec. 22, 2022
Int. Cl. H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/3065 (2013.01) [H01L 21/02315 (2013.01); H01L 21/0273 (2013.01); H01L 21/31116 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A plasma processing method comprising:
providing a substrate including: an etching target film; a photoresist film on an upper surface of the etching target film, having a side surface that defines at least one opening in the upper surface of the etching target film; and a first film including a first portion on an upper surface of the photoresist film and second portion on the side surface of the photoresist film, the first portion having a film thickness larger than that of the second portion;
forming the first film before the etching target film is etched; and
trimming at least a part of the side surface of the photoresist film and at least a part of the second portion of the first film, wherein at least a part of the side surface of the photoresist film and at least a part of the second portion of the first film are etched while leaving the first portion.
 
26. A plasma processing method comprising:
providing a substrate including an etching target film, and a photoresist film on an upper surface of the etching target film, having a side surface that defines at least one opening in the upper surface of the etching target film;
obtaining a ratio of a film thickness of the photoresist film with respect to a dimension of the opening;
when the ratio is 1 or more and less than 2, forming a first film on the photoresist film;
when the ratio is less than 1, forming the first film on the photoresist film, and forming a second film on the first film, wherein the first film is formed before the etching target film is etched; and
trimming at least a part of the side surface of the photoresist film,
wherein the first film includes a first portion on an upper surface of the photoresist film and a second portion on the side surface of the photoresist film, in which a film thickness of the first portion is larger than that of the second portion, and
the second film is formed at least on the first portion of the first film.