US 12,451,360 B2
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Arito Ogawa, Toyama (JP); and Atsuro Seino, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Feb. 12, 2024, as Appl. No. 18/439,445.
Application 18/439,445 is a continuation of application No. 18/085,970, filed on Dec. 21, 2022, granted, now 11,915,938.
Application 18/085,970 is a continuation of application No. 16/800,744, filed on Feb. 25, 2020, granted, now 11,538,688, issued on Dec. 27, 2022.
Application 16/800,744 is a continuation of application No. PCT/JP2018/011719, filed on Mar. 23, 2018.
Claims priority of application No. 2017-183406 (JP), filed on Sep. 25, 2017.
Prior Publication US 2024/0186146 A1, Jun. 6, 2024
Int. Cl. H01L 21/285 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2025.01); H01L 21/768 (2006.01)
CPC H01L 21/28568 (2013.01) [C23C 16/34 (2013.01); C23C 16/52 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) supplying a first gas which contains a metal and a halogen to the substrate;
(b) supplying a first reducing gas which contains a silicon and a hydrogen to the substrate;
(c) supplying a second gas to the substrate; and
(d) forming a film which contains the metal on the substrate, by performing (a), (b), and (c) a predetermined number of times in an order of (a), (c), and (b),
wherein after (a) is started and (c) is then started, (b) is started.