US 12,451,358 B2
Method for fabricating semiconductor device and apparatus for processing substrate using plasma
Joun Taek Koo, Seoul (KR); Seong Gil Lee, Gyeonggi-do (KR); Wan Jae Park, Gyeonggi-do (KR); Young Je Um, Busan (KR); Dong Hun Kim, Seoul (KR); Ji Hwan Lee, Incheon (KR); Dong Sub Oh, Busan (KR); Myoung Sub Noh, Gyeonggi-do (KR); and Du Ri Kim, Incheon (KR)
Assigned to SEMES CO., LTD., Chungcheongnam-Do (KR)
Filed by SEMES Co., Ltd., Chungcheongnam-do (KR)
Filed on Aug. 4, 2021, as Appl. No. 17/393,601.
Claims priority of application No. 10-2020-0116548 (KR), filed on Sep. 11, 2020.
Prior Publication US 2022/0084829 A1, Mar. 17, 2022
Int. Cl. H01L 21/28 (2025.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 21/28008 (2013.01) [H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device comprising:
providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, the substrate further comprising a trench penetrating the first oxide film, the nitride film, and the second oxide film in a thickness direction perpendicular to an upper surface of the substrate;
chamfering the first and second oxide films exposed by the trench to reduce the thickness of ends of the first and second oxide films while removing a part of the nitride film exposed by the trench by using a first plasma process, wherein the first plasma process uses a fluorine-containing radical; and
removing a portion of the nitride film left after the first plasma process by using a second plasma process,
wherein a selection ratio of the nitride film to the first and second oxide films is a first selection ratio in the first plasma process,
wherein a selection ratio of the nitride film to the first and second oxide films is a second selection ratio greater than the first selection ratio in the second plasma process.