US 12,451,357 B2
Semiconductor device and manufacturing method therefor
Hongfeng Jin, Jiangsu (CN); Ruibin Cao, Jiangsu (CN); Feng Lin, Jiangsu (CN); Xiang Qin, Jiangsu (CN); Yu Huang, Jiangsu (CN); and Chunxu Li, Jiangsu (CN)
Assigned to CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu (CN)
Appl. No. 18/258,902
Filed by CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu (CN)
PCT Filed Jul. 27, 2021, PCT No. PCT/CN2021/108670
§ 371(c)(1), (2) Date Jun. 22, 2023,
PCT Pub. No. WO2022/134571, PCT Pub. Date Jun. 30, 2022.
Claims priority of application No. 202011541975.7 (CN), filed on Dec. 23, 2020.
Prior Publication US 2024/0047212 A1, Feb. 8, 2024
Int. Cl. H01L 21/265 (2006.01); H01L 21/027 (2006.01); H01L 21/266 (2006.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01)
CPC H01L 21/2652 (2013.01) [H01L 21/0274 (2013.01); H01L 21/266 (2013.01); H10D 30/0281 (2025.01); H10D 30/65 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
providing a substrate of a first conductivity type;
forming doped regions of a second conductivity type in the substrate, the doped regions including adjacent first and second drift regions, wherein the second conductivity type is opposite to the first conductivity type;
forming a polysilicon film on the substrate, the polysilicon film covering the doped regions;
forming patterned photoresist on the polysilicon film, wherein the patterned photoresist covers the first and second drift regions, and a portion of the polysilicon film above a reserved region for a body region between the first and second drift regions is exposed in the patterned photoresist; and
forming the body region of the first conductivity type in the reserved region by performing a high-energy ion implantation process, the body region having a top surface that is flush with top surfaces of the doped regions, the body region having a bottom surface that is not higher than bottom surfaces of the doped regions.