US 12,451,354 B2
Double patterning method of patterning a substrate
Eric Chih-Fang Liu, Albany, NY (US); Katie Lutker-Lee, Albany, NY (US); Steven Grzeskowiak, Albany, NY (US); Jodi Grzeskowiak, Schenectady, NY (US); Jeffrey Smith, Albany, NY (US); and David L. O'Meara, Albany, NY (US)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 9, 2022, as Appl. No. 17/941,331.
Prior Publication US 2024/0087892 A1, Mar. 14, 2024
Int. Cl. H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/0337 (2013.01) [H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming, over a hardmask layer and an underlying layer of a substrate, a pattern of first trenches between adjacent template lines, each of the first trenches exposing a portion of the hardmask layer, and each of the template lines comprising a mandrel and spacers on sidewalls of the mandrel;
forming a pattern of first blocks over the pattern of the first trenches and the template lines, the first blocks dividing the first trenches to form a pattern of first stencil trenches;
transferring the pattern of first stencil trenches to the hardmask layer to form a pattern of first hardmask trenches, each of the first hardmask trenches exposing a portion of the underlying layer;
forming a first fill layer filling the first hardmask trenches and exposing the mandrels;
selectively removing the mandrels to form second trenches, each of the second trenches exposing a portion of the hardmask layer; and
forming a conformal liner in the second trenches and over a surface of the spacers, a surface of the first blocks, and a surface of the first fill layer to form third trenches.
 
13. A method of forming a semiconductor device, the method comprising:
forming a hardmask layer over an underlying layer of a substrate;
forming template lines over the hardmask layer, adjacent template lines being separated by a pattern of first trenches, each of the first trenches exposing a portion of the hardmask layer, and each of the template lines comprising a mandrel and spacers on sidewalls of the mandrel;
forming a pattern of first blocks over the pattern of the first trenches and the template lines, the first blocks dividing the first trenches to form a pattern of first stencil trenches;
etching the hardmask layer through the first stencil trenches to form a pattern of first hardmask trenches, each of the first hardmask trenches exposing a portion of the underlying layer;
depositing a first fill layer in the first hardmask trenches, a top surface of the first fill layer being below a top surface of the mandrels, a top surface of the spacers, and a top surface of the first blocks;
selectively etching the mandrels to form second trenches, each of the second trenches exposing a portion of the hardmask layer; and
depositing a conformal liner in the second trenches and over the top surface of the spacers, the top surface of the first blocks, and the top surface of the first fill layer to form third trenches.