US 12,451,351 B2
Method for preparing a substrate
Liyang Zhang, Suzhou (CN); and Kai Cheng, Suzhou (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Suzhou (CN)
Filed by ENKRIS SEMICONDUCTOR, INC., Suzhou (CN)
Filed on Dec. 16, 2021, as Appl. No. 17/552,755.
Application 17/552,755 is a continuation in part of application No. 16/653,038, filed on Oct. 15, 2019, abandoned.
Application 16/653,038 is a continuation of application No. PCT/CN2017/100946, filed on Sep. 7, 2017.
Prior Publication US 2022/0108890 A1, Apr. 7, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/30 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01)
CPC H01L 21/02658 (2013.01) [C23C 16/303 (2013.01); C30B 25/02 (2013.01); C30B 29/406 (2013.01); H01L 21/0243 (2013.01); H01L 21/02614 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02499 (2013.01); H01L 21/0254 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for preparing a substrate, comprising the following steps:
S1, providing a reaction container in which a base substrate is mounted;
S2, conducting a metal source into the reaction container, and forming a thin film layer on a surface of the base substrate, wherein a part of a surface of the base substrate is covered by the thin film layer, so that the base substrate is provided with an exposed surface that is not covered by the thin film layer, wherein the thin film layer is a metal thin film; and
S3, conducting a corrosive gas into the reaction container to form one or more recessed holes in at least a part of the exposed surface, wherein after step S3, a Ga-containing compound is prepared on the thin film layer,
wherein the thin film layer is made of one of Mg;
wherein in the step S1, the reaction container is a metal-organic chemical vapor deposition reactor, an atomic deposition reactor or a chemical beam epitaxial reactor; and
wherein in the step S3, the corrosive gas is one of NH3 and H2;
wherein a thickness of the thin film layer is less than or equal to 1 nm;
wherein the thin film layer is provided with pores which correspond to the exposed surface; and
wherein the metal source is conducted into the reaction container intermittently.