US 12,451,349 B2
Semiconductor manufacturing method using sacrificial layer etching for doping concentration reduction
Kai Cheng, Jiangsu (CN); and Peng Xiang, Jiangsu (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 17/916,752
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Aug. 24, 2020, PCT No. PCT/CN2020/110831
§ 371(c)(1), (2) Date Oct. 3, 2022,
PCT Pub. No. WO2022/040865, PCT Pub. Date Mar. 3, 2022.
Prior Publication US 2023/0154749 A1, May 18, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H10D 62/85 (2025.01)
CPC H01L 21/02581 (2013.01) [H01L 21/02458 (2013.01); H01L 21/3065 (2013.01); H01L 21/02505 (2013.01); H10D 62/8503 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
S1: forming a first epitaxial structure above a substrate, wherein the first epitaxial structure is doped with a doping element;
S2: forming a sacrificial layer above the first epitaxial structure;
S3: etching the sacrificial layer;
S4: growing an insertion layer above the first epitaxial structure when the etching of the sacrificial layer is completed;
S5: growing the second epitaxial structure above the insertion layer;
wherein, before proceeding to step S4, step S2 and step S3 are repeated N times until a concentration of the doping element in the first epitaxial structure is lower than a predetermined threshold; and
wherein a protection layer is provided between the first epitaxial structure and the sacrificial layer.