US 12,451,348 B2
Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrate
Tadaaki Kaneko, Hyogo (JP); Natsuki Yoshida, Hyogo (JP); and Kazufumi Aoki, Hyogo (JP)
Assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
Appl. No. 17/436,309
Filed by KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
PCT Filed Mar. 3, 2020, PCT No. PCT/JP2020/008964
§ 371(c)(1), (2) Date Sep. 3, 2021,
PCT Pub. No. WO2020/179793, PCT Pub. Date Sep. 10, 2020.
Claims priority of application No. 2019-040070 (JP), filed on Mar. 5, 2019.
Prior Publication US 2022/0181149 A1, Jun. 9, 2022
Int. Cl. H01L 21/02 (2006.01); C30B 33/12 (2006.01)
CPC H01L 21/02378 (2013.01) [C30B 33/12 (2013.01); H01L 21/02595 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method for manufacturing a SiC substrate comprising an etching process of etching a SiC substrate under a SiC—Si equilibrium vapor pressure environment by accommodating the SiC substrate inside a main container made of a material containing SiC that generates vapor pressure of a gaseous species containing Si element and a gaseous species containing C element in an internal space, and heating the main container so that a portion of the main container is arranged on a low temperature side of a temperature gradient and the SiC substrate is arranged on a high temperature side of the temperature gradient under an environment of vapor pressure of the gaseous species containing Si element.