US 12,451,346 B2
Modulated atomic layer deposition
Chan Myae Myae Soe, Santa Clara, CA (US); Chloe Baldasseroni, Portland, OR (US); Shiva Sharan Bhandari, Sherwood, OR (US); Pulkit Agarwal, Beaverton, OR (US); Adrien LaVoie, Newberg, OR (US); and Bart J. Van Schravendijk, Palo Alto, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Jun. 7, 2024, as Appl. No. 18/737,855.
Application 18/737,855 is a division of application No. 17/594,816, granted, now 12,040,181, previously published as PCT/US2019/040648, filed on Jul. 3, 2019.
Claims priority of provisional application 62/841,463, filed on May 1, 2019.
Prior Publication US 2024/0332007 A1, Oct. 3, 2024
Int. Cl. H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/401 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus for processing substrates, the apparatus comprising:
one or more process chambers;
one or more gas inlets into the one or more process chambers and associated flow control hardware; and
a controller having at least one processor and a memory, whereby the at least one processor and the memory are communicatively connected with one another, the at least one processor is at least operatively connected with the flow control hardware, and the memory stores computer-executable instructions configured to control the at least one processor to at least control the flow control hardware to:
cause insertion of a substrate to at least one of the one or more process chambers;
cause introduction of a first set of alternating flows of a precursor and a reactant into the at least one of the one or more process chambers via the one or more gas inlets for a first duration; and
subsequent to the first duration, cause introduction of a second set of alternating flows the precursor and the reactant into the at least one of the one or more process chambers via the one or more gas inlets for a second duration; and
wherein the second duration is at least 1.1 times longer than the first duration.