US 12,451,345 B2
PECVD of SiBN thin films with low leakage current
Chuanxi Yang, Los Altos, CA (US); Hang Yu, Woodland, CA (US); Sanjay Kamath, Fremont, CA (US); Deenesh Padhi, Sunnyvale, CA (US); Honggun Kim, San Jose, CA (US); Euhngi Lee, Santa Clara, CA (US); Zubin Huang, Santa Clara, CA (US); Diwakar N. Kedlaya, San Jose, CA (US); Rui Cheng, Santa Clara, CA (US); and Karthik Janakiraman, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 29, 2024, as Appl. No. 18/650,014.
Application 18/650,014 is a continuation of application No. 16/725,226, filed on Dec. 23, 2019, abandoned.
Claims priority of provisional application 62/787,666, filed on Jan. 2, 2019.
Prior Publication US 2024/0304437 A1, Sep. 12, 2024
Int. Cl. H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); C23C 16/513 (2006.01)
CPC H01L 21/0217 (2013.01) [C23C 16/0209 (2013.01); C23C 16/345 (2013.01); C23C 16/513 (2013.01); H01L 21/02274 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A capacitor device, comprising:
a stopper layer comprising silicon boron nitride and disposed on a substrate, wherein the silicon boron nitride comprises about 18 atomic percent (at %) to about 50 at % of boron;
a dielectric layer disposed on the stopper layer;
vias formed within the dielectric layer and the stopper layer;
metal contacts disposed on bottoms of the vias, wherein each via contains one of the metal contacts;
a nitride barrier layer comprising a metal nitride material and disposed on walls of the vias and disposed on the metal contacts; and
an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer comprises one or more holes or voids formed therein.