| CPC H01L 21/02101 (2013.01) [B08B 5/02 (2013.01); B08B 7/0021 (2013.01); H01L 21/68742 (2013.01)] | 8 Claims |

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1. A substrate processing method, comprising:
supporting a substrate having a liquid film on an upper surface substantially in a horizontal posture by placing the substrate on a flat support tray;
accommodating the support tray into an internal space of a chamber and sealing the internal space;
introducing a gas which is pressurized toward a gap space between a lower surface of the support tray and a bottom surface of the internal space; and
processing the substrate by a supercritical processing fluid by introducing the supercritical processing fluid into the internal space, wherein a pressure difference between an upper space of the support tray and a lower space of the support tray within the processing space is created by introducing the gas such that the lower space has a higher pressure than the upper space.
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