US 12,451,336 B2
Substrate processing apparatus and substrate processing method
Shingo Koiwa, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Nov. 18, 2022, as Appl. No. 17/990,143.
Claims priority of application No. 2021-188695 (JP), filed on Nov. 19, 2021.
Prior Publication US 2023/0162956 A1, May 25, 2023
Int. Cl. H01J 37/32 (2006.01); H01L 21/683 (2006.01)
CPC H01J 37/32724 (2013.01) [H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01); H01L 21/6833 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A substrate support comprising:
an electrostatic chuck that attracts a substrate, the electrostatic chuck including a dielectric and a plurality of attracting electrodes disposed inside the dielectric, each attracting electrode corresponding to one of a plurality of temperature control regions of the electrostatic chuck;
a plurality of heater electrodes, each heater electrode corresponding to one of the plurality of temperature control regions and configured to heat the substrate;
an attracting power source for applying a respective attraction voltage to each attracting electrode to attract the substrate; and
a heating power source for applying a respective heater voltage to each heater electrode to heat the substrate,
wherein the attracting power source controls a magnitude of the attraction voltage applied to each attracting electrode based on a magnitude of the heater voltage applied to the corresponding heater electrode in a same temperature control region to maintain a transfer amount of charges between the substrate and each attracting electrode below a threshold value at which the substrate remains attracted to the electrostatic chuck.