US 12,451,332 B2
Atomic layer treatment process using metastable activated radical species
Xinyu Bao, Fremont, CA (US); and Haoquan Fang, Sunnyvale, CA (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Appl. No. 17/274,350
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
PCT Filed Aug. 30, 2019, PCT No. PCT/US2019/049079
§ 371(c)(1), (2) Date Mar. 8, 2021,
PCT Pub. No. WO2020/055612, PCT Pub. Date Mar. 19, 2020.
Claims priority of provisional application 62/729,124, filed on Sep. 10, 2018.
Prior Publication US 2022/0093365 A1, Mar. 24, 2022
Int. Cl. H01J 37/32 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01)
CPC H01J 37/32449 (2013.01) [C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); H01J 37/32724 (2013.01); H01L 21/0228 (2013.01); H01L 21/02326 (2013.01); H01L 21/0234 (2013.01); H01L 21/3065 (2013.01); H01J 2237/334 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A substrate processing system for selectively etching a substrate, comprising:
a first chamber;
a second chamber including a substrate support;
a gas delivery system to selectively supply at least one of a purge gas and a treatment gas to the first chamber and the second chamber;
a plasma generating system to selectively generate inductively coupled plasma in the first chamber;
a gas distribution device arranged between the first chamber and the second chamber, the gas distribution device comprising a flange, an annular sidewall, and upper and lower surfaces defining a dual plenum;
wherein the dual plenum comprises:
a first plenum defined by a first plurality of through holes extending from the upper surface to the lower surface; and
a second plenum defined by (i) an annular channel arranged in the annular sidewall, (ii) a plurality of connecting channels extending along parallel chords between opposite sides of the annular channel and connected to the annular channel, and (iii) a second plurality of through holes extending from the plurality of connecting channels through the lower surface, wherein a plurality of rows of the first through holes is arranged between adjacent ones of the plurality of connecting channels; and
wherein the flange extends radially outwardly from the annular sidewall and comprises an inlet in fluid communication with the annular channel and the plurality of connecting channels via (i) a first channel extending from a radially outer surface of the flange into the flange and (ii) a second channel extending through the annular sidewall and directly connecting to the annular channel; and
a controller programmed to:
a) flow the purge gas to purge the first chamber and the second chamber;
b) after a), flow the treatment gas via the inlet and through the second plenum to create an adsorption layer on a surface of the substrate;
c) stop flow of the treatment gas;
d) flow the purge gas to purge the first chamber and the second chamber; and
e) while flowing the purge gas to the first chamber, strike plasma in the first chamber to create metastable active radical species and to deliver the metastable active radical species to the second chamber through the first plenum to selectively etch the substrate.