US 12,451,322 B2
Method of forming a multipole device, method of influencing an electron beam, and multipole device
John Breuer, Munich (DE); Dominik Patrick Ehberger, Ebersberg (DE); Kathrin Mohler, Olching (DE); and Ivo Liska, Haar (DE)
Assigned to ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH, Heimstetten (DE)
Filed by ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH, Heimstetten (DE)
Filed on Feb. 15, 2023, as Appl. No. 18/110,284.
Prior Publication US 2024/0274396 A1, Aug. 15, 2024
Int. Cl. H01J 37/147 (2006.01); H01J 37/09 (2006.01); H01J 37/153 (2006.01); H01J 37/28 (2006.01)
CPC H01J 37/1472 (2013.01) [H01J 37/09 (2013.01); H01J 37/153 (2013.01); H01J 37/28 (2013.01); H01J 2237/022 (2013.01); H01J 2237/1516 (2013.01); H01J 2237/1534 (2013.01); H01J 2237/24514 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a multipole device for influencing an electron beam, the method carried out in an electron beam apparatus that comprises an aperture body having at least one aperture opening, the method comprising:
deflecting the electron beam off an optical axis of the electron beam apparatus to impinge successively on two or more surface portions of the aperture body on two or more sides of the at least one aperture opening to generate an electron beam-induced deposition pattern configured to act as a multipole in a charged state.