US 12,451,314 B2
Electron beam devices with semiconductor ultraviolet light source
Remigijus Gaska, Columbia, SC (US)
Assigned to Gaska Consulting, LLC, Columbia, SC (US)
Filed by Gaska Consulting, LLC, Columbia, SC (US)
Filed on Feb. 7, 2022, as Appl. No. 17/665,794.
Claims priority of provisional application 63/148,227, filed on Feb. 11, 2021.
Prior Publication US 2022/0301804 A1, Sep. 22, 2022
Int. Cl. H01J 1/34 (2006.01); H01J 37/073 (2006.01)
CPC H01J 1/34 (2013.01) [H01J 37/073 (2013.01); H01J 2201/3423 (2013.01); H01J 2237/06333 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A device comprising:
a semiconductor ultraviolet light source;
a photocathode attached to the semiconductor ultraviolet light source, the photocathode having a first surface;
a photocathode electrode attached to the photocathode;
an anode having a first surface facing towards the first surface of the photocathode;
a separation layer located between and in contact with the first surface of the photocathode and the first surface of the anode, the separation layer being configured to create a vacuum gap between the first surface of the photocathode and the first surface of the anode; and
an anode terminal connected to the anode and extending distally into the vacuum gap;
wherein the semiconductor ultraviolet light source generates photoelectrons at the first surface of the photocathode that are transmitted via the vacuum gap to the anode terminal, and
wherein the semiconductor ultraviolet light source, the photocathode, the photocathode electrode, the anode, the anode terminal, and the separation layer are configured together as a monolithic integrated element.