US 12,451,292 B2
Ceramic microelectronic devices and methods of their manufacture
Ali Moalemi, San Diego, CA (US); and Euan Patrick Armstrong, Vienna, VA (US)
Assigned to Eulex Components Inc, San Diego, CA (US)
Filed by Eulex Components Inc, San Diego, CA (US)
Filed on Jun. 29, 2020, as Appl. No. 16/915,886.
Claims priority of provisional application 62/867,786, filed on Jun. 27, 2019.
Prior Publication US 2020/0411250 A1, Dec. 31, 2020
Int. Cl. H01G 4/30 (2006.01); H01G 4/005 (2006.01); H01G 4/12 (2006.01); H01G 4/40 (2006.01)
CPC H01G 4/30 (2013.01) [H01G 4/005 (2013.01); H01G 4/1209 (2013.01); H01G 4/40 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A microelectronic device comprising:
a dielectric body forming a monolithic structure;
at least a first conductor formed of a first continuous member of conductive material, the at least first conductor comprising at least a first conductive layer having at least a first portion embedded within the monolithic structure of the dielectric body and extending across at least a portion of the dielectric body along a first plane within the dielectric body such that some portion of the dielectric material forming the dielectric body encompasses said first portion, and a second portion continuously interconnected with the first portion via a connecting portion, the second portion extending along a second plane parallel to the first plane;
wherein the second portion is either exposed to a top surface of the dielectric body or embedded within the monolithic structure of the dielectric body such that some portion of the dielectric material forming the dielectric body encompasses said second portion;
wherein the connecting portion is formed of a bent portion of the first continuous member of conductive material, and wherein the connecting portion is not perpendicular to the first portion or the second portion of the first conductive layer;
at least a second conductive layer on the top surface of the dielectric body parallel to the first or second portion of the first conductive layer, such that some portion of the dielectric material forming the monolithic structure of the dielectric body is disposed therebetween and defines a layer of dielectric material having a dielectric thickness; and
a conductive paste deposited at a left side and a right side of the microelectronic device, wherein the conductive paste overlaps partially with the top surface and a bottom surface of the dielectric body, wherein the bottom surface is opposite to the top surface.