US 12,451,194 B2
Memory device for performing read operation and operating method thereof
Byoung In Joo, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jul. 21, 2023, as Appl. No. 18/356,222.
Claims priority of application No. 10-2023-0023739 (KR), filed on Feb. 22, 2023.
Prior Publication US 2024/0282388 A1, Aug. 22, 2024
Int. Cl. G11C 7/02 (2006.01); G11C 15/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 7/02 (2013.01); G11C 15/04 (2013.01); G11C 16/102 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory block including a plurality of pages; and
a control logic configured to control, when a read command for a selected page among the plurality of pages is received, a read operation on the selected page to be performed using a plurality of read voltages,
wherein the plurality of read voltages are determined based on a reference value for the selected page and a read count representing a number of times a read operation of reading data stored in the selected page is performed after a program operation of storing data in the selected page,
wherein control logic is further configured to set the reference value for the selected page according to an order of the program operation to be sequentially performed on the plurality of pages.