US 12,451,166 B2
Semiconductor device and method of manufacturing semiconductor device
Yong Jin Jeong, Icheon (KR); and Sang Gu Yeo, Icheon (KR)
Assigned to SK hynix Inc., Icheon (KR)
Filed by SK hynix Inc., Icheon (KR)
Filed on Aug. 4, 2023, as Appl. No. 18/365,726.
Claims priority of application No. 10-2023-0045257 (KR), filed on Apr. 6, 2023.
Prior Publication US 2024/0339135 A1, Oct. 10, 2024
Int. Cl. G11C 5/06 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC G11C 5/063 (2013.01) [H10B 63/84 (2023.02); H10N 70/021 (2023.02); H10N 70/841 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first contact plug;
a word line electrically connected to the first contact plug and extending in a first direction;
a second contact plug;
a bit line extending in a second direction that intersects the first direction; and
a memory cell disposed between the word line and the bit line and comprising a variable resistance layer,
wherein the bit line comprises a first protruding part that protrudes into the memory cell, a second protruding part that is connected to the second contact plug, and a connection part that connects the first protruding part and the second protruding part and that extends in the second direction.