US 12,451,091 B2
Temperature control circuit and temperature control method of driver chip and timing control driver board
Guohuo Su, Beijing (CN); Zhihua Sun, Beijing (CN); Baoyu Liu, Beijing (CN); Yanjiao Pan, Beijing (CN); Xueliang Yang, Beijing (CN); Jing Ma, Beijing (CN); and Jiantao Liu, Beijing (CN)
Assigned to BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., Beijing (CN); and BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., Beijing (CN)
Appl. No. 18/567,203
Filed by BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., Beijing (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Feb. 28, 2023, PCT No. PCT/CN2023/078746
§ 371(c)(1), (2) Date Dec. 5, 2023,
PCT Pub. No. WO2024/178613, PCT Pub. Date Sep. 6, 2024.
Prior Publication US 2025/0087177 A1, Mar. 13, 2025
Int. Cl. G09G 3/296 (2013.01); G09G 3/36 (2006.01)
CPC G09G 3/3614 (2013.01) [G09G 2310/08 (2013.01); G09G 2320/041 (2013.01); G09G 2330/021 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A temperature control circuit of a driver chip, comprising:
a switching transistor, comprising a gate electrode, a first electrode and a second electrode;
a comparison circuit, comprising a first comparison end and a second comparison end; and
a control circuit, comprising a first connection end, a second connection end, and a third connection end,
wherein, the first connection end is electrically connected with the gate electrode of the switching transistor; the second connection end is electrically connected with the first comparison end; and the third connection end is electrically connected with an output end of the comparison circuit;
the first electrode of the switching transistor is connected with a first node located between an inductor of a boost circuit and a Schottky diode; the second comparison end and the first electrode or the second electrode of the switching transistor are connected to a second node; the boost circuit is configured to supply a driving voltage to the driver chip;
the control circuit is configured to output a first reference voltage to the comparison circuit through the second connection end; the comparison circuit is configured to compare a magnitude relationship between a voltage on the second comparison end and the first reference voltage and output a comparison result; the control circuit acquires the comparison result through the third connection end, and determines whether an output current on the boost circuit is excessively large according to the comparison result,
the second electrode of the switching transistor is grounded; the second comparison end and the first electrode of the switching transistor are connected to the second node; and the second node is connected with the first node,
the temperature control circuit further comprises a first resistor, located between the first electrode of the switching transistor and the second node.