US 12,449,990 B2
Adjusting trim settings to improve memory performance or reliability
Junichi Sato, Yokohama (JP)
Assigned to Lodestar Licensing Group LLC, Evanston, IL (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 17, 2021, as Appl. No. 17/528,579.
Application 17/528,579 is a continuation of application No. 16/848,766, filed on Apr. 14, 2020, granted, now 11,188,244.
Prior Publication US 2022/0075540 A1, Mar. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01); G11C 29/38 (2006.01)
CPC G06F 3/0632 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 29/38 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a non-volatile storage media configured in a memory device;
at least one processing device of the memory device; and
memory containing instructions configured to instruct the at least one processing device to:
perform a read or write test on a portion of the non-volatile storage media, wherein at least one characteristic associated with reliability of the non-volatile storage media is observed during the read or write test, wherein the read or write test is performed based on temperature data received from a sensor, wherein the at least one characteristic comprises a thermal condition, and read performance when reading data, or write performance when storing data;
determine, based on the observed characteristic and a temperature of the memory device, at least one trim setting, wherein the trim setting comprises a voltage parameter or a timing parameter;
update the memory device to use the at least one trim setting for read or write access to the non-volatile storage media;
store first data in the non-volatile storage media, and wherein the thermal condition is a change in thermal condition observed when storing the first data.