US 12,449,737 B2
Pattern forming method, resist material, and pattern forming apparatus
Kazuyo Morita, Tokyo (JP); and Kimiko Hattori, Tokyo (JP)
Assigned to Oji Holdings Corporation, Tokyo (JP)
Appl. No. 17/623,979
Filed by Oji Holdings Corporation, Tokyo (JP)
PCT Filed Jun. 30, 2020, PCT No. PCT/JP2020/025633
§ 371(c)(1), (2) Date Dec. 30, 2021,
PCT Pub. No. WO2021/002351, PCT Pub. Date Jan. 7, 2021.
Claims priority of application No. 2019-123880 (JP), filed on Jul. 2, 2019.
Prior Publication US 2022/0365448 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01); G03F 7/00 (2006.01); G03F 7/012 (2006.01); G03F 7/039 (2006.01)
CPC G03F 7/70625 (2013.01) [G03F 7/0045 (2013.01); G03F 7/0125 (2013.01); G03F 7/0397 (2013.01); G03F 7/70125 (2013.01)] 13 Claims
 
1. A pattern forming method, comprising:
applying a resist material onto a substrate to form a resist film,
introducing a metal into the resist film,
exposing, and
developing,
wherein:
the resist material comprises a polymer, and the polymer comprises a unit derived from structures represented by the following formula (101):

OG Complex Work Unit Chemistry
wherein, in the formula (101), R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R1 may be the same or different; R11 represents a hydrogen atom or an alkyl group optionally having a substituent; R2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y1 represents a single bond or a linking group,
the polymer is a main-chain scission type polymer, and
the introducing a metal is established between the applying the resist material and the exposing.