US 12,449,734 B2
Lithography apparatus and method
Wei-Chun Yen, Tainan (TW); Chi Yang, Tainan (TW); Sheng-Kang Yu, Hsinchu (TW); Shang-Chieh Chien, New Taipei (TW); Li-Jui Chen, Hsinchu (TW); and Heng-Hsin Liu, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 10, 2024, as Appl. No. 18/660,862.
Application 18/660,862 is a continuation of application No. 17/691,647, filed on Mar. 10, 2022, granted, now 12,007,694.
Claims priority of provisional application 63/270,247, filed on Oct. 21, 2021.
Prior Publication US 2024/0295825 A1, Sep. 5, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01); H05G 2/00 (2006.01)
CPC G03F 7/70033 (2013.01) [G03F 7/70891 (2013.01); H05G 2/0092 (2024.08); H05G 2/0094 (2024.08)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
generating extreme ultraviolet light with an extreme ultraviolet source, the extreme ultraviolet source comprising a byproduct transport ring, a light collector, and vanes, the byproduct transport ring being disposed between the vanes and the light collector;
heating the byproduct transport ring for a first duration;
after heating the byproduct transport ring for the first duration, heating the vanes for a second duration; and
after heating the vanes for the second duration, cooling the vanes.